位置：首页 > IC中文资料第11267页 > AT49BV040T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT49BV040T | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 |   | |
AT49BV040T | 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory | Microchip 微芯科技 | | |
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | | ||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over | Atmel 爱特梅尔 | | ||
4-megabit (512K x 8) Flash Memory Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of | Atmel 爱特梅尔 | | ||
4-megabit (512K x 8) Flash Memory Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of | Atmel 爱特梅尔 | |
AT49BV040T产品属性
- 类型
描述
- 型号
AT49BV040T
- 制造商
ATMEL
- 制造商全称
ATMEL Corporation
- 功能描述
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATMEL/爱特梅尔 |
23+ |
PLCC32 |
50000 |
全新原装正品现货,支持订货 |
|||
ATMEL |
03+ |
BGA |
74 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ATMEL/爱特梅尔 |
25+ |
PLCC32 |
40 |
原装正品,欢迎来电咨询! |
|||
ATMEL/爱特梅尔 |
23+ |
TSSOP |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ATMEL/爱特梅尔 |
21+ |
TSOP |
6000 |
全新原装 现货 价优 |
|||
ATMEL |
22+ |
TSOP32 |
8200 |
全新原装现货!自家库存! |
|||
ATMEL |
23+24 |
TSOP- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
ATM |
24+/25+ |
1920 |
原装正品现货库存价优 |
||||
ATMEL |
24+ |
TSOP |
9860 |
一级代理/放心购买 |
|||
ATMEL |
2015+ |
TSSOP |
19889 |
一级代理原装现货,特价热卖! |
AT49BV040T芯片相关品牌
AT49BV040T规格书下载地址
AT49BV040T参数引脚图相关
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