4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory

Description\nThe AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over th • Single Supply for Read and Write: 2.7 to 3.6V\n• Fast Read Access Time – 70 ns\n• Internal Program Control and Timer\n• Sector Architecture\n   – One 16K Bytes Boot Block with Programming Lockout\n   – Two 8K Bytes Parameter Blocks\n   – Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes)\n•;

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

封装/外壳：32-LCC（J 形引线） 包装：卷带（TR） 描述：IC FLASH 4MBIT PARALLEL 32PLCC 集成电路（IC） 存储器

封装/外壳：32-LCC（J 形引线） 包装：卷带（TR） 描述：IC FLASH 4MBIT PARALLEL 32PLCC 集成电路（IC） 存储器

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh