SNAP ACTION PRECISION POSITION SWITCHES (RATED 4 AMPS @ 28VDC)

Features • Qualified per MIL-PRF-8805, Enclosure Symbol 5 • Hermetically sealed with dry nitrogen gas backfill • Proven snap-action switching, reliable performance and long life • Excellent shock and vibration resistance • Switching up to 4 amps • Optimal for low level circuits • Temperatur

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

Space 1-megabit (128K x 8) Paged Parallel EEPROMs

Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi

Space 1-megabit (128K x 8) Paged Parallel EEPROMs

Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi

Space 1-megabit (128K x 8) Paged Parallel EEPROMs

Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi

Space 1-megabit (128K x 8) Paged Parallel EEPROMs

Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi

Space 1-megabit (128K x 8) Paged Parallel EEPROMs

Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m