Description

The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation less than 30 mW. When the device is deselected the standby current is less than 50 µA.

Features

• 2.7V to 3.6V Supply

Full Read and Write Operation

• Low Power Dissipation

8 mA Active Current

50 µA CMOS Standby Current

• Read Access Time - 300 ns

• Byte Write - 3 ms

• Direct Microprocessor Control

DATA Polling

READY/BUSY Open Drain Output

• High Reliability CMOS Technology

Endurance: 100,000 Cycles

Data Retention: 10 Years

• JEDEC Approved Byte-Wide Pinout

• Commercial and Industrial Temperature Ranges