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AT28BV64价格
参考价格：￥19.5361
型号：AT28BV64B-20JU 品牌：Atmel 备注：这里有AT28BV64多少钱，2025年最近7天走势，今日出价，今日竞价，AT28BV64批发/采购报价，AT28BV64行情走势销售排行榜，AT28BV64报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT28BV64 | 64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | Atmel 爱特梅尔 |   | |
AT28BV64 | Low Power Dissipation | Microchip 微芯科技 | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | Atmel 爱特梅尔 | | ||
64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | Atmel 爱特梅尔 | | ||
64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | Atmel 爱特梅尔 | | ||
64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | Atmel 爱特梅尔 | | ||
64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | Atmel 爱特梅尔 | | ||
64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | Atmel 爱特梅尔 | | ||
64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | Atmel 爱特梅尔 | | ||
64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | Atmel 爱特梅尔 | | ||
64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | Atmel 爱特梅尔 | | ||
Low Power Dissipation 文件：293.03 Kbytes Page：15 Pages | Atmel 爱特梅尔 | | ||
封装/外壳：28-TSSOP（0.465"，11.80mm 宽） 包装：托盘 描述：IC EEPROM 64KBIT PARALLEL 28TSOP 集成电路（IC） 存储器 | Microchip 微芯科技 | | ||
封装/外壳：32-LCC（J 形引线） 包装：托盘 描述：IC EEPROM 64KBIT PARALLEL 32PLCC 集成电路（IC） 存储器 | Microchip 微芯科技 | | ||
Battery-Voltage 64Kb (8Kbit x 8) Parallel EEPROM with Software Data Protection | Microchip 微芯科技 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：367.88 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：367.88 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：451.13 Kbytes Page：16 Pages | Atmel 爱特梅尔 | | ||
Hardware and Software Data Protection 文件：398.83 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：367.88 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：451.13 Kbytes Page：16 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：367.88 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：367.88 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：367.88 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：367.88 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：451.13 Kbytes Page：16 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：367.88 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：367.88 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件：451.13 Kbytes Page：16 Pages | Atmel 爱特梅尔 | |
AT28BV64产品属性
- 类型
描述
- 型号
AT28BV64
- 制造商
ATMEL
- 制造商全称
ATMEL Corporation
- 功能描述
64K 8K x 8 Battery-Voltage CMOS E2PROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip Technology |
21+ |
32-LCC(J 形引线) |
160 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
atmel |
25+ |
500000 |
行业低价,代理渠道 |
||||
ATMEL/爱特梅尔 |
23+ |
TSOP28 |
98900 |
原厂原装正品现货!! |
|||
ATMEL/爱特梅尔 |
24+ |
TSOP |
24000 |
只做原装进口现货 |
|||
MICROCHIP(美国微芯) |
24+ |
TSOPI-28 |
6473 |
百分百原装正品,可原型号开票 |
|||
ATMEL/爱特梅尔 |
24+ |
SOP |
54000 |
郑重承诺只做原装进口现货 |
|||
MICROCHIP/微芯 |
21+ |
SOP |
7000 |
正品渠道现货,终端可提供BOM表配单。 |
|||
Microchip |
23+ |
2017-MI |
21500 |
受权代理!全新原装现货特价热卖! |
|||
ATMEL |
2013 |
SSOP |
500 |
全新 |
|||
ATMEL |
2016+ |
PLCC |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
AT28BV64规格书下载地址
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2019-11-29
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