AT28BV64价格

参考价格:¥19.5361

型号:AT28BV64B-20JU 品牌:Atmel 备注:这里有AT28BV64多少钱,2025年最近7天走势,今日出价,今日竞价,AT28BV64批发/采购报价,AT28BV64行情走势销售排行榜,AT28BV64报价。
型号 功能描述 生产厂家&企业 LOGO 操作
AT28BV64

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K 8K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection

Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Low Power Dissipation

文件:293.03 Kbytes Page:15 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

封装/外壳:28-TSSOP(0.465",11.80mm 宽) 包装:托盘 描述:IC EEPROM 64KBIT PARALLEL 28TSOP 集成电路(IC) 存储器

Microchip

微芯科技

封装/外壳:32-LCC(J 形引线) 包装:托盘 描述:IC EEPROM 64KBIT PARALLEL 32PLCC 集成电路(IC) 存储器

Microchip

微芯科技

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:367.88 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:367.88 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:451.13 Kbytes Page:16 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Hardware and Software Data Protection

文件:398.83 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:367.88 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:451.13 Kbytes Page:16 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:367.88 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:367.88 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:367.88 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:367.88 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:451.13 Kbytes Page:16 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:367.88 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:451.13 Kbytes Page:16 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

文件:367.88 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

AT28BV64产品属性

  • 类型

    描述

  • 型号

    AT28BV64

  • 制造商

    ATMEL

  • 制造商全称

    ATMEL Corporation

  • 功能描述

    64K 8K x 8 Battery-Voltage CMOS E2PROM

更新时间:2025-8-17 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ATMEL
24+
N/A
8000
全新原装正品,现货销售
MICROCHIP(美国微芯)
2511
TSOP-28
8790
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
AT
23+
TSSOP
9526
MICROCHIP/微芯
23+
SOP
3000
原装渠道现货库存价格优势
ATMEL/爱特梅尔
24+
SOP
9600
原装现货,优势供应,支持实单!
MICROCHIP(美国微芯)
24+
TSOPI-28
6473
百分百原装正品,可原型号开票
ATMEL
25+
TSOP28
12588
原装正品,自己库存 假一罚十
Microchip(微芯)
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICROCHIP
三年内
1983
只做原装正品
24+
N/A
53000
一级代理-主营优势-实惠价格-不悔选择

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