NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3000 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 7 dB min. at 0.5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 7 dB min. at 1.0 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 5 dB min. at 3 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

Long-Life, Switching Power Grade Radial

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