4-pin high capacity of 1.1A, I/O isolation voltage of 5,000V

FEATURES Greatly increased capacity Continuous load current: 1.1A High insulation I/O isolation voltage: 5,000 Vrms Compact 4-pin DIP type The improved performance relative to mercury or mechanical relays TYPICAL APPLICATIONS Measuring instruments Security and disaster-preventing sy

PhotoMOS HE 1 Form A High Capacity

FEATURES Greatly increased load current in a compact DIP package Continuous load current: 3.5A (AQV251G) Greatly improved specifications allow you to use this in place of mercury and mechanical relays Low on-resistance (Typ. 35mΩ, AQV251G)

PhotoMOS 功率 1a

封装/外壳：4-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NO 2A 0-100V 继电器 固态继电器

封装/外壳：4-SIP 包装：管件 描述：SSR RELAY SPST-NO 2A 0-100V 继电器 固态继电器

POWER PhotoMOS RELAYS (Voltage Sensitive Type)

POWER PhotoMOS RELAYS(Voltage Sensitive Type) FEATURES 1. A voltage sensitive power PhotoMOS relay Conventional power PhotoMOS relays are connected externally to an input limiting resistor in order to obtain the appropriate LED current. Adding an internal constant-current element render

4-pin high capacity of 1.1A, I/O isolation voltage of 5,000V

FEATURES Greatly increased capacity Continuous load current: 1.1A High insulation I/O isolation voltage: 5,000 Vrms Compact 4-pin DIP type The improved performance relative to mercury or mechanical relays TYPICAL APPLICATIONS Measuring instruments Security and disaster-preventing sy

PhotoMOS HE 1 Form A High Capacity

FEATURES Greatly increased load current in a compact DIP package Continuous load current: 3.5A (AQV251G) Greatly improved specifications allow you to use this in place of mercury and mechanical relays Low on-resistance (Typ. 35mΩ, AQV251G)

PhotoMOS HE 1 Form A High Capacity

FEATURES Greatly increased load current in a compact DIP package Continuous load current: 3.5A (AQV251G) Greatly improved specifications allow you to use this in place of mercury and mechanical relays Low on-resistance (Typ. 35mΩ, AQV251G)

4-pin high capacity of 1.1A, I/O isolation voltage of 5,000V

FEATURES Greatly increased capacity Continuous load current: 1.1A High insulation I/O isolation voltage: 5,000 Vrms Compact 4-pin DIP type The improved performance relative to mercury or mechanical relays TYPICAL APPLICATIONS Measuring instruments Security and disaster-preventing sy

POWER PhotoMOS RELAYS with Internal Varistor

FEATURES 1. Power PhotoMOS relay with internal varistor An internal varistor on the output side protects the output MOSFET from the reverse voltage from an external voltage surge or inductive load. 2. High capacity PhotoMOS relay Supports control of minute loads to a maximum 3.0 A. Suitabl

PhotoMOS 功率 1a 电压驱动

PhotoMOS 功率 1a 高容量

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.