PhotoMOS HE 1 Form A High Capacity

FEATURES Greatly increased load current in a compact DIP package Continuous load current: 3.5A (AQV251G) Greatly improved specifications allow you to use this in place of mercury and mechanical relays Low on-resistance (Typ. 35mΩ, AQV251G)

4-pin high capacity of 1.1A, I/O isolation voltage of 5,000V

FEATURES Greatly increased capacity Continuous load current: 1.1A High insulation I/O isolation voltage: 5,000 Vrms Compact 4-pin DIP type The improved performance relative to mercury or mechanical relays TYPICAL APPLICATIONS Measuring instruments Security and disaster-preventing sy

POWER PhotoMOS RELAYS (Voltage Sensitive Type)

POWER PhotoMOS RELAYS(Voltage Sensitive Type) FEATURES 1. A voltage sensitive power PhotoMOS relay Conventional power PhotoMOS relays are connected externally to an input limiting resistor in order to obtain the appropriate LED current. Adding an internal constant-current element render

封装/外壳：4-SIP 包装：管件 描述：SSR RELAY SPST-NO 1.8A 0-100V 继电器 固态继电器

封装/外壳：4-SIP 包装：管件 描述：SSR RELAY SPST-NO 1.8A 0-100V 继电器 固态继电器

PhotoMOS 功率 1a 电压驱动

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.