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APT13003EZ价格

参考价格:¥0.4973

型号:APT13003EZTR-E1 品牌:Diodes, Inc 备注:这里有APT13003EZ多少钱,2026年最近7天走势,今日出价,今日竞价,APT13003EZ批发/采购报价,APT13003EZ行情走势销售排行榜,APT13003EZ报价。
型号 功能描述 生产厂家 企业 LOGO 操作
APT13003EZ

NPN TRANSISTOR

DIODES

美台半导体

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

General Description The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power. The APT13003E series are available in TO-92 and TO-126 packages. Features • High Switching Speed • High Colle

BCDSEMI

新进半导体

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

General Description The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power. The APT13003E series are available in TO-92 and TO-126 packages. Features • High Switching Speed • High Colle

BCDSEMI

新进半导体

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

文件:654.24 Kbytes Page:9 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

文件:654.24 Kbytes Page:9 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

文件:654.24 Kbytes Page:9 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

文件:654.24 Kbytes Page:9 Pages

BCDSEMI

新进半导体

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:卷带(TR) 描述:TRANS NPN 465V 1.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

STMICROELECTRONICS

意法半导体

APT13003EZ产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    No

  • Product Type:

    NPN

  • IC:

    1 A

  • ICM:

    1.6 A

  • PD:

    1.1 W

  • hFE:

    13 Min

  • hFE (@ IC):

    0.5 A

  • hFE (Min 2):

    5

  • hFE (@ IC2):

    1 A

  • VCE (SAT) Max:

    0.3 mV

  • VCE (SAT) (@ IC/IB) (A/m A):

    0.5/100

  • VCE (SAT) (@ IC/IB2) (A/m A):

    1/250

  • fT (MHz):

    4

  • VCE (SAT) (Max.2):

    400 mV

  • RCE(SAT):

    N/A mΩ

  • Packages:

    TO92

更新时间:2026-5-16 17:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
2450+
TO92
9850
只做原厂原装正品现货或订货假一赔十!
DIODES/美台
25+
NA
30000
房间原装现货特价热卖,有单详谈
DIODES/美台
25+
TO92
918000
明嘉莱只做原装正品现货
DIODES/美台
21+
TO-92
30000
百域芯优势 实单必成 可开13点增值税
TO92
23+
NA
15659
振宏微专业只做正品,假一罚百!
BCDSEMICONDUCTOR
24+
28912
BCD
22+
TO-92
8000
原装正品支持实单
BCD
2016+
TO-92
8767
只做原装,假一罚十,公司可开17%增值税发票!
DIODES/美台
21+
TO-92
8080
只做原装,质量保证
BCD
1201+
TO-92
260
全新 发货1-2天

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