APT13003EU价格
参考价格：￥0.8073
型号：APT13003EU-G1 品牌：Diodes Incorporated 备注：这里有APT13003EU多少钱，2026年最近7天走势，今日出价，今日竞价，APT13003EU批发/采购报价，APT13003EU行情走势销售排行榜，APT13003EU报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT13003EU | NPN TRANSISTOR | DIODES 美台半导体 |   | |
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power. The APT13003E series are available in TO-92 and TO-126 packages. Features • High Switching Speed • High Colle | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR 文件：654.24 Kbytes Page：9 Pages | BCDSEMI 新进半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 465V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR 文件：654.24 Kbytes Page：9 Pages | BCDSEMI 新进半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 465V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
APT13003EU产品属性
- 类型
描述
- AutomotiveCompliantPPAP：
No
- ProductType：
NPN
- IC：
1.5A
- ICM：
3A
- PD：
20W
- hFE：
13Min
- hFE(@IC)：
0.5A
- hFE(Min2)：
5
- hFE(@IC2)：
1A
- VCE(SAT)Max：
300mV
- VCE(SAT)(@IC/IB)：
0.5/100A/mA
- VCE(SAT)(Max.2)：
400mV
- VCE(SAT)(@IC/IB2)：
1/250A/mA
- fT：
4
- RCE(SAT)：
N/AmΩ
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES(美台) |
24+ |
TO-126 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
DIODES(美台) |
25+ |
TO-126 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES/美台 |
25+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
BCD/DIODES |
2021 |
TO-126 |
880000 |
明嘉莱只做原装正品现货 |
|||
BCD |
22+ |
TO-126 |
8000 |
原装正品支持实单 |
|||
DIODES/美台 |
21+ |
TO126 |
8080 |
只做原装,质量保证 |
|||
DIODES |
15+P |
TO-126 |
2188 |
全新 发货1-2天 |
|||
DIODES/美台 |
22+ |
TO126 |
20000 |
原装 品质保证 |
|||
BCD/DIODES |
2024+ |
TO-126 |
50000 |
原装正品 |
|||
DIODES(美台) |
2447 |
TO126 |
115000 |
4000个/袋一级代理专营品牌!原装正品,优势现货,长 |
APT13003EU规格书下载地址
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DdatasheetPDF页码索引
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