Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

Dual P-Channel Enhancement Mode MOSFET

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

Dual P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features · –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.

Dual P-Channel Enhancement-Mode MOSFET

Dual P-Channel Enhancement-Mode MOSFET

Dual N-Channel 2.5V Specified PowerTrench MOSFET

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Dual P-Channel 20-V (D-S) MOSFET

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