Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

Dual Enhancement Mode MOSFET (N-and P-Channel)

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

Dual Enhancement Mode MOSFET (N- and P-Channel)

文件：308.1 Kbytes Page：14 Pages

Dual Enhancement Mode MOSFET (N- and P-Channel)

Dual Enhancement Mode MOSFET (N- and P-Channel)

文件：308.1 Kbytes Page：14 Pages

Dual Enhancement Mode MOSFET (N- and P-Channel)

文件：308.1 Kbytes Page：14 Pages

Dual Enhancement Mode MOSFET (N- and P-Channel)

文件：308.1 Kbytes Page：14 Pages

HIGH VOLTAGE PLANAR RESISTORS

High Voltage Planar Resistors 4500 Series •Voltages up to 20kV dc. •Powers up to 4.5 Watts •TCR to 50ppm/°C •Customs design service available •Planar construction gives low inductance and capacitance Application Notes The terminations should not be bent closer than 1.5m

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customs design service available

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4700

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