Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

HIGH VOLTAGE PLANAR RESISTORS

High Voltage Planar Resistors 4500 Series •Voltages up to 20kV dc. •Powers up to 4.5 Watts •TCR to 50ppm/°C •Customs design service available •Planar construction gives low inductance and capacitance Application Notes The terminations should not be bent closer than 1.5m

Shielded Surface Mount Power Inductors

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customs design service available

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4500 Series FTIR spectrometers

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4700

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