Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

CMOS/DMOS Wideband High-Frequency Multiplexer

DESCRIPTION The CWB4500 is a very high performance Monolithic 4 Channel Wideband/Video Multiplexer designed for switching wide bandwidth analog and digital signals. The high speed, low ON resistance and low capacitance is achieved through Calogic’s proprietary CMOS/DMOS process that combines low-

5.3W 2-Channel AF Power Amplifier

Features • Low idling current (20mA/2 channels) enabling prolonged battery life. • Less dependence of idling current on VCC. • High power (5.3W typ. ×2). • High ripple rejection (60dB at steady state). Since filters are arranged in 3 stages (including 1 stage inside the IC) to a

High Speed Infrared Emitting Diode in Side View Package

DESCRIPTION TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: side view • Dimensions (L x W x H in mm): 4.5 x 4 x 4.8 • Pe

2.7-5.5V Serial Infrared Transceiver Module Family

文件：554.95 Kbytes Page：12 Pages

2.7-5.5V Serial Infrared Transceiver Module Family

文件：554.95 Kbytes Page：12 Pages