型号 功能描述 生产厂家 企业 LOGO 操作
AOTF7N65

650V, 7A N-Channel MOSFET

文件:413.84 Kbytes Page:6 Pages

AOSMD

万国半导体

AOTF7N65

N-Channel 650 V (D-S) Power MOSFET

文件:1.15509 Mbytes Page:11 Pages

VBSEMI

微碧半导体

AOTF7N65

isc N-Channel MOSFET Transistor

文件:296.16 Kbytes Page:2 Pages

ISC

无锡固电

AOTF7N65

高压MOSFET (500V - 1000V)

AOS

美国万代

7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

650V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

AOTF7N65产品属性

  • 类型

    描述

  • 型号

    AOTF7N65

  • 功能描述

    MOSFET N-CH 650V 7A TO220F

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-14 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS
2016+
TO220F
6000
公司只做原装,假一罚十,可开17%增值税发票!
AOS/万代
2026+
TO-220F
54558
百分百原装现货 实单必成 欢迎询价
AO原装
24+
TO-220F
30980
原装现货/放心购买
AOS/万代
20+PB
TO220
280
20+PB
AOS/万代
25+
TO220F
25000
AOS/万代全系列在售
AOS/万代
21+
TO-220F
30000
优势供应 实单必成 可13点增值税
AOS/万代
19+
TO-220F
880000
明嘉莱只做原装正品现货
AOS(万代)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
AOS(万代)
23+
标准封装
20000
正规渠道,只有原装!
Alpha & Omega Semiconductor In
22+
TO2203
9000
原厂渠道,现货配单

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