isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed s

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

高压MOSFET (500V - 1000V)

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

Schottky barrier diode

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Schottky barrier diode

文件：116.13 Kbytes Page：4 Pages

Schottky barrier diode

文件：120.48 Kbytes Page：4 Pages