Schottky barrier diode

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Schottky barrier diode

文件：116.13 Kbytes Page：4 Pages

Schottky barrier diode

文件：120.48 Kbytes Page：4 Pages

Schottky barrier diode

Schottky barrier diode

文件：116.13 Kbytes Page：4 Pages

Schottky barrier diode

文件：120.48 Kbytes Page：4 Pages

封装/外壳：DO-41 迷你型，轴向 包装：卷带（TR）剪切带（CT） 描述：DIODE SCHOTTKY 60V 1A MSR 分立半导体产品 二极管 - 整流器 - 单

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 24A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-AC inverter, power switch

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed s

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies• Micro inverter with DC/AC inverter topology