800V, 7.4A N-Channel MOSFET

General Description The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabilit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.63Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

800V, 7.4A N-Channel MOSFET

800V N-CHANNEL MOSFET

DESCRIPTION The UTC8N80 is an N-channel mode Power FET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and co

Drain Current ?밒D= 8A@ TC=25C

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8A 800V N-channel Enhancement Mode Power MOSFET

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8A 800V N-channel Enhancement Mode Power MOSFET

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8A 800V N-channel Enhancement Mode Power MOSFET

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