位置：首页 > IC中文资料第12833页 > AOT4S60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
AOT4S60 | iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
AOT4S60 | 600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | |
AOT4S60 | 600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | |
AOT4S60 | N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
600V4AaMOSPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Materialspecification 文件：48.89 Kbytes Page：4 Pages | FERROXCUBEFERROXCUBE INC. 飞磁 |  | |
AOT4S60产品属性
- 类型
描述
- 型号
AOT4S60
- 制造商
SHENZHENFREESCALE
- 制造商全称
ShenZhen FreesCale Electronics. Co., Ltd
- 功能描述
600V 4A a MOS TM Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor In |
24+ |
TO-220 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
AOS |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
AOS/万代 |
22+ |
TO220 |
25000 |
AOS/万代全系列在售 |
|||
AOS/万代 |
22+ |
TO-220 |
50000 |
只做原装假一罚十,欢迎咨询 |
|||
AO |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
|||
AOS/万代 |
23+ |
NA/ |
350 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
toshiba |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
AOS |
10+ |
TO220 |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AOS/万代 |
TO-220 |
198589 |
假一罚十原包原标签常备现货! |
||||
AOS/万代 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
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AOT4S60规格书下载地址
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DdatasheetPDF页码索引
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