| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
AOB4S60 | iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
AOB4S60 | 600V4AaMOSPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | |
AOB4S60 | 600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | |
AOB4S60 | N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
Materialspecification 文件：48.89 Kbytes Page：4 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 |  | |
AOB4S60产品属性
- 类型
描述
- 型号
AOB4S60
- 功能描述
MOSFET N-CH 600V 4A D2PAK
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
aMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS |
2016+ |
TO-263 |
6528 |
房间原装进口现货假一赔十 |
|||
AOS |
24+ |
TO-263 |
17591 |
公司现货库存 支持实单 |
|||
AOS/万代 |
24+ |
TO-263 |
498676 |
免费送样原盒原包现货一手渠道联系 |
|||
AOS/万代 |
21+ |
TO-263 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
AOS/万代 |
24+ |
NA/ |
5850 |
原装现货,当天可交货,原型号开票 |
|||
AOS/万代 |
22+ |
TO263 |
25000 |
AOS/万代全系列在售 |
|||
AOS/万代 |
23+ |
TO-263 |
5685 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
AOS(万代) |
23+ |
标准封装 |
20000 |
正规渠道,只有原装! |
|||
AOS |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
AOS/万代 |
23+ |
TO263 |
30000 |
原装正品假一罚十,代理渠道价格优 |
AOB4S60芯片相关品牌
AOB4S60规格书下载地址
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AOB4S60数据表相关新闻
AO8846
AO8846
2021-9-23AO8842
AO8842
2021-9-23AOCJY2A-100.000MHZ-F-SW
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AOCJY-12.800MHZ
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AOB264L,全新原装现货0755-82732291当天发货或门市自取.
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AOD2210，分立半导体产品晶体管
2019-8-15
DdatasheetPDF页码索引
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