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AOT11S60L价格
参考价格：￥5.7967
型号：AOT11S60L 品牌：Alpha 备注：这里有AOT11S60L多少钱，2025年最近7天走势，今日出价，今日竞价，AOT11S60L批发/采购报价，AOT11S60L行情走势销售排行榜，AOT11S60L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOT11S60L | 600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 |   | |
AOT11S60L | 600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | |
AOT11S60L | isc N-Channel MOSFET Transistor 文件：304.4 Kbytes Page：2 Pages | ISC 无锡固电 | | |
AOT11S60L | 高压MOSFET (500V - 1000V) | AOS 美国万代 | | |
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to | ISC 无锡固电 | | ||
600V 11A a MOS Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | |
AOT11S60L产品属性
- 类型
描述
- 型号
AOT11S60L
- 功能描述
MOSFET N-CH 600V 11A TO220
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
aMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS/万代 |
23+ |
TO-220 |
153750 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
AOS/万代 |
22+ |
TO220 |
25000 |
AOS/万代全系列在售 |
|||
AOS/万代 |
23+ |
TO-220 |
24190 |
原装正品代理渠道价格优势 |
|||
ALPHA万代 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
Alpha & Omega Semiconductor In |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
AOS/万代 |
25+ |
TO-220 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
AOS/ 万代 |
24+ |
TO-220-3 |
19306 |
公司现货库存 支持实单 |
|||
AOS |
20+ |
TO-220 |
5000 |
||||
ALPHA万代 |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
AOT11S60L规格书下载地址
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DdatasheetPDF页码索引
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