Complementary Enhancement Mode Field Effect Transistor

General Description The AON3601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.Standard Product AON3601 is Pb-free (meets ROHS & Sony 259 specifications). AON3601L is a

Complementary Enhancement Mode Field Effect Transistor

Dual N-Channel 100V Specified PowerTrench MOSFET

General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

T-13/4 (5 mm), T-1 (3 mm), 5 Volt, 12 Volt, Integrated Resistor LED Lamps

Description The 5 volt and 12 volt series lamps contain an integral current limiting resistor in series with the LED. This allows the lamp to be driven from a 5 volt/12 volt source without an external current limiter. The red LEDs are made from GaAsP on a GaAs substrate. The High Efficiency Red a

Low voltage dual-band RF front-end

DESCRIPTION The SA3601 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process—QUBiC2. The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise

Multiple output voltage regulators

文件：84.68 Kbytes Page：12 Pages

Multiple output voltage regulators

文件：84.68 Kbytes Page：12 Pages