P-Channel Enhancement Mode Field Effect Transistor

[Alpha & Omega Semiconductors] General Description The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO3415 is

P-Channel Mosfet

Product Summary Vos=-20V,ID =-4A RDS(ON)

P-Channel MOSFET

Features VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON)

小信号MOSFET

MOSFET

-20V/-4.2A P Channel Advanced Power MOSFET

丝印代码：AF**；20V P-Channel MOSFET

文件：288.62 Kbytes Page：5 Pages

P-Channel 20-V (D-S) MOSFET

文件：1.024089 Mbytes Page：9 Pages

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-5 A (VGS =-4.5V) ● RDS(ON)

丝印代码：XFDX；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE Excellent RDS(ON), low gate charge,low gate voltages

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-5 A (VGS =-4.5V) ● RDS(ON)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3415AL uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. - RoHS Compliant - Halogen Free Product Summary Parameter VDS

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-4A (VGS =-4.5V) ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-4A (VGS =-4.5V) ● RDS(ON)

20V P-Channel MOSFET

文件：288.62 Kbytes Page：5 Pages

20V P-Channel MOSFET

文件：325.4 Kbytes Page：5 Pages

P-Channel 20-V (D-S) MOSFET

文件：1.02311 Mbytes Page：9 Pages

20V P-Channel MOSFET

文件：325.4 Kbytes Page：5 Pages

P-Channel MOSFET

文件：1.72172 Mbytes Page：4 Pages

P-Channel MOSFET

文件：2.074429 Mbytes Page：4 Pages

包装：卷带（TR） 描述：MOSFET P-CH 20V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

P-Channel MOSFET

文件：2.00668 Mbytes Page：4 Pages

包装：托盘 描述：MOSFET 2P-CH 30V 6A 8-SOIC 分立半导体产品 晶体管 - FET，MOSFET - 阵列

Dual MOSFET Driver with Bootstrapping

GENERAL DESCRIPTION The ADP3415 is a dual MOSFET driver optimized for driving two N-channel FETs that are the two switches in the nonisolated synchronous buck power converter topology. Each driver size is optimized for performance in notebook PC regulators for CPUs in the 20 A range. The high-sid

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

MSP 34x5G Multistandard Sound Processor Family

[Micronas] Introduction The MSP 34x5G family of single-chip Multistandard Sound Processors covers the sound processing of all analog TV standards worldwide, as well as the NICAM digital sound standards. The full TV sound processing, starting with analog sound IF signal-in, down to processed anal

Multistandard Sound Processors

文件：472.95 Kbytes Page：71 Pages