MOSFETN-CHANNELENHANCEMENTMODEPOWERMOSFET

FEATURES TSSOP8 VDS=20V,ID=6.2A RDS(ON)=21mΩ(Typ.)@VGS=4.5V RDS(ON)=22mΩ(Typ.)@VGS=4.0V RDS(ON)=23mΩ(Typ.)@VGS=3.2V RDS(ON)=25mΩ(Typ.)@VGS=2.5V SOT-26 VDS=20V,ID=6A RDS(ON)=22mΩ(Typ.)@VGS=4.5V RDS(ON)=25mΩ(Typ.)@VGS=2.5V Fastswitch Highpowerandcurr

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DualN-Channel25-V(D-S)MOSFET

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FEATURE zTrenchFETPowerMOSFET zExcellentRDS(on) zLowGateCharge zHighPowerandCurrentHandingCapability zSurfaceMountPackage APPLICATION zBatteryProtection zLoadSwitch zPowerManagement

LOW-DROPOUTREGULATORS.HIGHEFFICIENCY

Designedspecificallytomeettherequirementforextendedoperationofbattery-poweredequipmentsuchascordlessandcellulartelephones,theA8205SLHvoltageregulatorsofferthereduceddropoutvoltageandquiescentcurrentessentialformaximumbatterylife.Applicablealsotopalmtopcompute

Electronic,2C#20StrTC,PVCIns,PVCJkt,CMG

ProductDescription Electronic,2Conductor20AWG(7x28)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG

DualN-Channel25-V(D-S)MOSFET

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20VN-ChannelEnhancementMOSFET

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