FEATURES

 TSSOP8

VDS= 20V, ID= 6.2A

RDS(ON) =21mΩ(Typ.)@ VGS= 4.5V

RDS(ON) =22mΩ(Typ.)@ VGS= 4.0V

RDS(ON) =23mΩ(Typ.)@VGS = 3.2V

RDS(ON) =25mΩ(Typ.)@VGS = 2.5V

 SOT-26

VDS = 20V, ID = 6A

RDS(ON) =22mΩ(Typ.)@VGS = 4.5V

RDS(ON) =25mΩ(Typ.)@VGS = 2.5V

 Fast switch

 High power and current handling capability

 Exceptional on-resistance

 Available in a TSSOP8 and SOT-26 packages.

DESCRIPTION

AM8205 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology to provide excellent RDS(ON). These devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

AM8205 is available in a TSSOP8 and SOT-26 packages.

APPLICATION

 Power Management in Notebook Computer

 Portable Equipment and Battery Powered.