丝印代码：8205；20V,4A Dual N-Channel MOSFET

文件：330.96 Kbytes Page：7 Pages

丝印代码：8205；N-channel Double MOSFET

文件：1.48586 Mbytes Page：5 Pages

丝印代码：8205；20V Dual N-Channel MOSFET

文件：531.63 Kbytes Page：4 Pages

丝印代码：8205；Dual N-Channel, 20V, 5.2A, Power MOSFET

文件：3.22313 Mbytes Page：8 Pages

丝印代码：8205；Dual N-Channel, 20V, 5.2A, Power MOSFET

文件：3.22313 Mbytes Page：8 Pages

丝印代码：8205；Dual N-Channel, 20V, 5.7A, Power MOSFET

文件：2.34002 Mbytes Page：8 Pages

丝印代码：8205；Dual N-Channel, 20V, 5.7A, Power MOSFET

文件：2.34002 Mbytes Page：8 Pages

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

LOW-DROPOUT REGULATORS . HIGH EFFICIENCY

Designed specifically to meet the requirement for extended operation of battery-powered equipment such as cordless and cellular telephones, the A8205SLH voltage regulators offer the reduced dropout voltage and quiescent current essential for maximum battery life. Applicable also to palmtop compute

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

包装：卷带（TR）剪切带（CT） 描述：CONN RING CIRC 14-16AWG #10 连接器，互连器件 环形连接器

Dual N-Channel 25-V (D-S) MOSFET

文件：963.82 Kbytes Page：8 Pages

丝印代码：8205A；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

丝印代码：8205A；Dual N-Channel Enhancement Power Mosfet

Features VDS = 20V,ID =6A RDS(ON),19.5mΩ(Typ) @ VGS =4.5V RDS(ON), 25mΩ(Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

丝印代码：8205A；N-Channel Enhancement Mode MOSFET

Feature
Advanced trench process technology
High density cell design for ultra low on-resistance Application
Battery protection
Switching application

丝印代码：8205F；N-channel Double MOSFET in a SOT23-6 Plastic Package.

Features advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltages as low as 2.5V.

丝印代码：8205A；Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management

丝印代码：8205A；Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management

丝印代码：8205A；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆Vgs+12V

丝印代码：8205A；20V NN-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

丝印代码：8205S；20V NN-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Powermanagement

丝印代码：8205B；N-Channel Advanced Power MOSFET

文件：339.28 Kbytes Page：8 Pages

丝印代码：8205G；N-CHANNEL ENHANCEMENT MODE

文件：223.2 Kbytes Page：3 Pages

丝印代码：8205G；N-CHANNEL ENHANCEMENT MODE

文件：261 Kbytes Page：3 Pages

丝印代码：8205B；N-Channel Enhancement Mode Field Effect Transistor

文件：577.47 Kbytes Page：6 Pages

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

Series R, 82000 & CSR – Audio Transformer

The R and 82000 & CSR series are ultra-miniature transformers in an encapsulated package with design layouts as through-hole or surface mount types. They can operate over a wide temperature range of -55°C to +130°C. Our proprietary materials and methods allow extreme temperatures of vapor phase, IR

WE-VD Disk Varistor

General Properties: It is recommended that the temperature of the component does not exceed +85°C under worst case conditions Operating Temperature -40 up to +85 °C Storage Conditions (in original packaging)

Hexagon socket key with 2C

Article description • With ball end, working angle approx. 25° • With hanging hole • Chrome vanadium steel, blade chrome-plated, tips phosphated

Mainstester 120-250 AC

Description Mainstester 120-250 AC Features & Benefits ~ Insulated for protection ~ Neon light for high visibility ~ with pocket clip ~ blade: 3 x 65 mm

3MM T HANDLE HEX DRIVER

DESCRIPTION: 3MM T HANDLE HEX DRIVER

WE-VD Disk Varistor

General Properties: It is recommended that the temperature of the component does not exceed +85°C under worst case conditions Operating Temperature -40 up to +85 °C Storage Conditions (in original packaging)

WE-VD Disk Varistor

General Properties: It is recommended that the temperature of the component does not exceed +85°C under worst case conditions Operating Temperature -40 up to +85 °C Storage Conditions (in original packaging)

0BA NUT SPINNER (150MM STUD CLEARANCE)

DESCRIPTION: 0BA NUT SPINNER (150MM STUD CLEARANCE)

WE-VD Disk Varistor

General Properties: It is recommended that the temperature of the component does not exceed +85°C under worst case conditions Operating Temperature -40 up to +85 °C Storage Conditions (in original packaging)

WE-VD Disk Varistor

General Properties: It is recommended that the temperature of the component does not exceed +85°C under worst case conditions Operating Temperature -40 up to +85 °C Storage Conditions (in original packaging)

WE-VD Disk Varistor

General Properties: It is recommended that the temperature of the component does not exceed +85°C under worst case conditions Operating Temperature -40 up to +85 °C Storage Conditions (in original packaging)

WE-VD Disk Varistor

General Properties: It is recommended that the temperature of the component does not exceed +85°C under worst case conditions Operating Temperature -40 up to +85 °C Storage Conditions (in original packaging)

WE-VD Disk Varistor

General Properties: It is recommended that the temperature of the component does not exceed +85°C under worst case conditions Operating Temperature -40 up to +85 °C Storage Conditions (in original packaging)

WE-VD Disk Varistor

General Properties: It is recommended that the temperature of the component does not exceed +85°C under worst case conditions Operating Temperature -40 up to +85 °C Storage Conditions (in original packaging)

WE-VD Disk Varistor

General Properties: It is recommended that the temperature of the component does not exceed +85°C under worst case conditions Operating Temperature -40 up to +85 °C Storage Conditions (in original packaging)

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

Dual N-Channel Enhancement Power Mosfet

Product Summary Vos = 20V,ID=6A RDS(ON), 19.5m 2 (Typ) @ VGS =4.5V RDS(ON), 25m 2 (Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package Dual N-Channel MOSFET APPLICATION z Battery Protection z Load Switch z Power Management

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.