Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

Dual N-Channel Enhancement Power Mosfet

Product Summary Vos = 20V,ID=6A RDS(ON), 19.5m 2 (Typ) @ VGS =4.5V RDS(ON), 25m 2 (Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

Dual N-Channel Enhancement Power Mosfet

Features VDS = 20V,ID =6A RDS(ON),19.5mΩ(Typ) @ VGS =4.5V RDS(ON), 25mΩ(Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

20V N 沟道增强型 MOS 场效应管

20V N-Channel Enhancement MOS FET

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5A 20V N-Channel Enhancement-Mode MOSFET

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Dual N-Channel Enhancement Mode MOSFET

文件：821.7 Kbytes Page：2 Pages

Dual N-Channel 25-V (D-S) MOSFET

文件：963.84 Kbytes Page：8 Pages

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

LOW-DROPOUT REGULATORS . HIGH EFFICIENCY

Designed specifically to meet the requirement for extended operation of battery-powered equipment such as cordless and cellular telephones, the A8205SLH voltage regulators offer the reduced dropout voltage and quiescent current essential for maximum battery life. Applicable also to palmtop compute

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

Dual N-Channel 25-V (D-S) MOSFET

文件：963.82 Kbytes Page：8 Pages

20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

MOS类沟槽型（Trench）和屏蔽栅沟槽（SGT）功率MOSFET产品，具有导通电阻低、开关特性优、可靠性高等特点。产品广泛应用于电池管理系统、负载开关、通信、消费电子等各个领域

MOSFET管

10V N-Channel Enhancement MOS FET

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