丝印代码：8205A；Dual N-Channel Enhancement Power Mosfet

Features VDS = 20V,ID =6A RDS(ON),19.5mΩ(Typ) @ VGS =4.5V RDS(ON), 25mΩ(Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

丝印代码：8205A；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

丝印代码：8205A；N-Channel Enhancement Mode MOSFET

Feature
Advanced trench process technology
High density cell design for ultra low on-resistance Application
Battery protection
Switching application

丝印代码：8205A；Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management

丝印代码：8205A；Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management

丝印代码：8205A；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆Vgs+12V

丝印代码：8205A；20V NN-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

Dual N-Channel Enhancement Power Mosfet

Product Summary Vos = 20V,ID=6A RDS(ON), 19.5m 2 (Typ) @ VGS =4.5V RDS(ON), 25m 2 (Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

20V N 沟道增强型 MOS 场效应管

Dual N-Channel Enhancement Mode MOSFET

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5A 20V N-Channel Enhancement-Mode MOSFET

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20V N-Channel Enhancement MOS FET

文件：329.03 Kbytes Page：3 Pages

Dual N-Channel 25-V (D-S) MOSFET

文件：963.84 Kbytes Page：8 Pages

20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

MOS类沟槽型（Trench）和屏蔽栅沟槽（SGT）功率MOSFET产品，具有导通电阻低、开关特性优、可靠性高等特点。产品广泛应用于电池管理系统、负载开关、通信、消费电子等各个领域

MOSFET管

10V N-Channel Enhancement MOS FET

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The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

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DESCRIPTION The TDA8205 is essentially divided into two signal processing sections. The first section handles all the NICAM signal acquisition, the QPSK demodulator and clock and data recovery circuits. The key point to note about this section is the dual frequency synthesiser. By use of only o

18W BTL x 2CH AUDIO POWER AMPLIFIER

文件：488.37 Kbytes Page：11 Pages

18W BTL x 2CH AUDIO POWER AMPLIFIER

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