MULTI CABLE

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P-Channel 60-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

P-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMIC HERMETIC PACKA

RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS

DESCRIPTION The AM1214-130 is a rugged, Class C common base device designed as driver of AM1214-250 for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted di

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 3:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMET

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMIC HER

RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS

DESCRIPTION The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry. • REFRACTOR

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ ME

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • Common Base • PG = 6.5 db at 325 W/1400 MHz • Omnigold™ Metalization System

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ ME

Three Channels Power Driver

Features 1) Surface m ount package ( SOP 16) 2) Lower supply current 3) Lower VCC standby current 4) Lower MOSFETs On resistance 5) Over temperature protection 6) Over temperature protection recover 7) Over current protection (CH_B C)

Three Channels Power Driver

Features 1) Surface m ount package ( SOP 16) 2) Built in steady voltage output 3) Lower supply current 4) Lower VCC standby current 5) Lower MOSFETs On resistance 6) Over temperature protection 7) Over temperature protection recover 8) Over current protection (CH_B&

Three Channels Power Motor Driver

Features 1) Surface m ount package ( DFN 3X3) 2) Built in steady voltage output 3) Lower supply current 4) Lower VCC standby current 5) Lower MOSFETs On resistance 6) Over temperature protection 7) Over temperature protection recover 8) Over current protection (CH_B&

MOSFET 650V, 12A N-CHANNEL

FEATURE • RDS(ON),typ.=0.60 Ω@VGS=10V • High Current Rating • Lower Capacitance • Lower Total Gate Charge Minimize Switching Loss • Fast Recovery Body Diode DESCRIPTION The AM12N65 is available in TO-220 and TO220F Packages. APPLICATIONS • Adaptor • Charger • SMPS Standby Power

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

原厂资料

文件：145.78 Kbytes Page：7 Pages

原厂资料

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指纹模组

指纹模组

指纹模组

封装/外壳：4-SMD，无引线 包装：卷带（TR） 描述：CRYSTAL 12.0000MHZ 12PF SMD 晶体，振荡器，谐振器 晶体

1 Watt Surface Mount DC/DC Converter Single Output

文件：419.11 Kbytes Page：4 Pages

This economically priced converter is perfect for low power applications

文件：210.63 Kbytes Page：2 Pages

1 Watt Surface Mount DC/DC Converter Single Output

文件：419.11 Kbytes Page：4 Pages

Highly suitable for high speed pick and place machine operation

文件：148.81 Kbytes Page：2 Pages

Single Output Surface Mount Package

文件：142.7 Kbytes Page：3 Pages

Single Output Surface Mount Package 1 Watt DC/DC Converter

文件：142.7 Kbytes Page：3 Pages

封装/外壳：14-SMD 模块 包装：盒 描述：1206 MHZ / 1575 MHZ CERAMIC DUPL RF/IF，射频/中频和 RFID 射频多路复用器

This economically priced converter is perfect for low power applications

文件：210.63 Kbytes Page：2 Pages

1 Watt Surface Mount DC/DC Converter Single Output

文件：419.11 Kbytes Page：4 Pages

Highly suitable for high speed pick and place machine operation

文件：148.81 Kbytes Page：2 Pages

Single Output Surface Mount Package

文件：142.7 Kbytes Page：3 Pages

Single Output Surface Mount Package 1 Watt DC/DC Converter

文件：142.7 Kbytes Page：3 Pages

Highly suitable for high speed pick and place machine operation

文件：148.81 Kbytes Page：2 Pages

Single Output Surface Mount Package

文件：142.7 Kbytes Page：3 Pages

Single Output Surface Mount Package 1 Watt DC/DC Converter

文件：142.7 Kbytes Page：3 Pages

This economically priced converter is perfect for low power applications

文件：210.63 Kbytes Page：2 Pages

1 Watt Surface Mount DC/DC Converter Single Output

文件：419.11 Kbytes Page：4 Pages

Highly suitable for high speed pick and place machine operation

文件：148.81 Kbytes Page：2 Pages

Single Output Surface Mount Package

文件：142.7 Kbytes Page：3 Pages

Single Output Surface Mount Package 1 Watt DC/DC Converter

文件：142.7 Kbytes Page：3 Pages

This economically priced converter is perfect for low power applications

文件：210.63 Kbytes Page：2 Pages

1 Watt Surface Mount DC/DC Converter Single Output

文件：419.11 Kbytes Page：4 Pages

Single Output Surface Mount Package

文件：142.7 Kbytes Page：3 Pages

Single Output Surface Mount Package 1 Watt DC/DC Converter

文件：142.7 Kbytes Page：3 Pages