型号 功能描述 生产厂家 企业 LOGO 操作
AM1214-300

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ ME

STMICROELECTRONICS

意法半导体

AM1214-300

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • Common Base • PG = 6.5 db at 325 W/1400 MHz • Omnigold™ Metalization System

ASI

AM1214-300

L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS

STMICROELECTRONICS

意法半导体

300 Watts - 50 Volts, 100us, 10 Radar 1200 1400 MHz

GENERAL DESCRIPTION The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifi

ADPOW

300 Watts - 40 Volts, 150關s, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specif

MICROSEMI

美高森美

300 Watts - 40 Volts, 150ms, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specif

ADPOW

300 Watts - 50 Volts, 330關s, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300V is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at three hundred thirty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is spe

MICROSEMI

美高森美

AM1214-300产品属性

  • 类型

    描述

  • 型号

    AM1214-300

  • 制造商

    ASI

  • 制造商全称

    ASI

  • 功能描述

    NPN SILICON RF POWER TRANSISTOR

更新时间:2026-1-29 14:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ANIMETA
22+
原厂原封
8200
全新原装现货!自家库存!
晶致
20+
QFN10
9800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DATEL
24+
DIP-8
9630
我们只做原装正品现货!量大价优!
AMTEK/晶致
24+
QFN10
50000
只做原装,欢迎询价,量大价优
NIPPON
2022+
DIP
48000
原厂代理 终端免费提供样品
AMTEK/晶致
2450+
QFN
8850
只做原装正品假一赔十为客户做到零风险!!
WALLINDUSTRIES
2308+
原装正品
4285
十年专业专注 优势渠道商正品保证
ST
23+
TO-59
8510
原装正品代理渠道价格优势
Intel/Altera
25+
-
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
Intel/Altera
25+
-
6843
样件支持,可原厂排单订货!

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