90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

文件：427.73 Kbytes Page：9 Pages

射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.11-2.17GHz 19Watt Gain 14.5dB

90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

文件：427.73 Kbytes Page：9 Pages

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW

RF Power Field Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214