型号 功能描述 生产厂家 企业 LOGO 操作
AGR18125EU

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

TRIQUINT

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

TRIQUINT

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

TRIQUINT

PAINTED TEXTURED GRAY RAL 7035

文件:120.25 Kbytes Page:1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Armoire autoportante modulaire a 2 portes en acier doux de type 12

文件:114.63 Kbytes Page:3 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

AGR18125EU产品属性

  • 类型

    描述

  • 型号

    AGR18125EU

  • 制造商

    TRIQUINT

  • 制造商全称

    TriQuint Semiconductor

  • 功能描述

    125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

更新时间:2026-3-2 9:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AGERE
23+
SMD
50000
全新原装正品现货,支持订货
AGERE
23+
9
专做原装正品,假一罚百!
AGERE
2026+
SMD
54648
百分百原装现货 实单必成 欢迎询价
AGERE
25+
SMD
8000
只有原装
23+
TO-63
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
TRIQUINT
09+
SMD
75
原装现货
PANASONIC
22+
原厂原封
8200
原装现货库存.价格优势!!
TRIQUINT
23+
SMD
8678
原厂原装
TRIQUINT
23+
TO-59
8510
原装正品代理渠道价格优势
AGERE
24+
SMD
8000
新到现货,只做全新原装正品

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