型号 功能描述 生产厂家 企业 LOGO 操作
HMET18125

PAINTED TEXTURED GRAY RAL 7035

文件:120.25 Kbytes Page:1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HMET18125

Armoire autoportante modulaire a 2 portes en acier doux de type 12

文件:114.63 Kbytes Page:3 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HMET18125

包装:盒 描述:MODULAR DBL DOOR ENCL 盒子,外壳,机架 机架

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HMET18125

包装:盒 描述:MODULAR DBL DOOR ENCL 盒子,外壳,机架 机架

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

TriQuint

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

TriQuint

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

TriQuint

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