| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HMET18125 | PAINTEDTEXTUREDGRAYRAL7035 文件：120.25 Kbytes Page：1 Pages | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 |  |   |
HMET18125 | Armoireautoportantemodulairea2portesenacierdouxdetype12 文件：114.63 Kbytes Page：3 Pages | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | | |
HMET18125 | 包装：盒 描述：MODULAR DBL DOOR ENCL 盒子，外壳，机架 机架 | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | | |
HMET18125 | 包装：盒 描述：MODULAR DBL DOOR ENCL 盒子，外壳，机架 机架 | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | | |
125W,1.805GHz-1.880GHz,LDMOSRFPowerTransistor Introduction TheAGR18125Eisa125W,26V,N-channelgold-metallized,laterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforglobalsystemformobilecommunication(GSM),enhanceddataforglobalevolution(EDGE),andmulti-carrierclassABpowe | TriQuint TriQuint Semiconductor |  | | |
125W,1.805GHz-1.880GHz,LDMOSRFPowerTransistor Introduction TheAGR18125Eisa125W,26V,N-channelgold-metallized,laterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforglobalsystemformobilecommunication(GSM),enhanceddataforglobalevolution(EDGE),andmulti-carrierclassABpowe | TriQuint TriQuint Semiconductor | | | |
125W,1.805GHz-1.880GHz,LDMOSRFPowerTransistor Introduction TheAGR18125Eisa125W,26V,N-channelgold-metallized,laterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforglobalsystemformobilecommunication(GSM),enhanceddataforglobalevolution(EDGE),andmulti-carrierclassABpowe | TriQuint TriQuint Semiconductor | | |
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