Low EMI Spread Spectrum Multiplier Clock

DESCRIPTION The ABE0101/02/04/06 are Spread Spectrum Clock Generators designed for the purpose of reducing EMI in high-speed digital systems. Any output frequency from 10 to 180MHz can be selected by programming 6 multiplier modes. The device is designed to operate from a crystal or reference clo

Low EMI Spread Spectrum Multiplier Clock

DESCRIPTION\nThe ABE0101/02/04/06 are Spread Spectrum Clock Generators designed for the purpose of reducing EMI in high-speed digital systems. Any output frequency from 10 to 180MHz can be selected by programming 6 multiplier modes. The device is designed to operate from a crystal or reference clock • Spread Spectrum Clock Generator with selectable multiplier from 1x to 6x outputs.\n• Output frequency ranges: 10MHz to 180MHz.\n• Accepts input from crystal or reference clock.\n• Selectable Center, Down or Asymmetric Spread Modulation.\n• Selectable Modulation rate.\n• TTL/CMOS compatible outputs;

Low EMI Spread Spectrum Multiplier Clock

DESCRIPTION The ABE0101/02/04/06 are Spread Spectrum Clock Generators designed for the purpose of reducing EMI in high-speed digital systems. Any output frequency from 10 to 180MHz can be selected by programming 6 multiplier modes. The device is designed to operate from a crystal or reference clo

Low EMI Spread Spectrum Multiplier Clock

DESCRIPTION The ABE0101/02/04/06 are Spread Spectrum Clock Generators designed for the purpose of reducing EMI in high-speed digital systems. Any output frequency from 10 to 180MHz can be selected by programming 6 multiplier modes. The device is designed to operate from a crystal or reference clo

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array?

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan