包装：盒 描述：FLUE PROBE WITH TEMPERATURE 测试与计量 配件

包装：散装 描述：FLUE PROBE WITH TEMPERATURE 测试与计量 配件

2.4GHz 无线通信芯片

A7701 is a TX technology. It integrates PA (up to 23dBm output power), LNA (gain up to 16 dB), RF switch as well as matching network so that only a few external components are needed. A7701 consists of 3 stages PA to provide extended link budget (distance) of larger TX output power and LNA for highe Small size (QFN 3X3, 16 pins).\nSupport 2400 ~ 2483.5MHz ISM band.\nWide range operation 3V ~ 3.9V.\nTX output power up to 23dBm.\nFew external components.\nIntegrate 3 stages PA.\nIntegrate LNA.\nIntegrate RF switch.\nIntegrate matching network.\n5dB LNA noise figure.\nRX current 5.4 mA.;

A770, Polymer Aluminum, 39 uF, 20, 50 VDC, -55/125°C

General Information Series A770 Dielectric Polymer Aluminum Style SMD Can Description Surface Mount, Polymer Aluminum RoHS Yes Lead V-Chip Qualifications AEC-Q200 AEC-Q200 Yes Halogen Free Yes

A770, Polymer Aluminum, 330 uF, 20, 25 VDC, -55/125°C

General Information Series A770 Dielectric Polymer Aluminum Style SMD Can Description Surface Mount, Polymer Aluminum RoHS Yes Lead V-Chip Qualifications AEC-Q200 AEC-Q200 Yes Halogen Free Yes

A770, Polymer Aluminum, 56 uF, 20, 63 VDC, -55/125°C

General Information Series A770 Dielectric Polymer Aluminum Style SMD Can Description Surface Mount, Polymer Aluminum RoHS Yes Lead V-Chip Qualifications AEC-Q200 AEC-Q200 Yes Halogen Free Yes

A770, Polymer Aluminum, 1,000 uF, 20, 16 VDC, -55/125°C

General Information Series A770 Dielectric Polymer Aluminum Style SMD Can Description Surface Mount, Polymer Aluminum RoHS Yes Lead V-Chip Qualifications AEC-Q200 AEC-Q200 Yes Halogen Free Yes

A770, Polymer Aluminum, 330 uF, 20, 35 VDC, -55/125°C

General Information Series A770 Dielectric Polymer Aluminum Style SMD Can Description Surface Mount, Polymer Aluminum RoHS Yes Lead V-Chip Qualifications AEC-Q200 AEC-Q200 Yes Halogen Free Yes

A770, Polymer Aluminum, 39 uF, 20, 50 VDC, -55/125°C

文件：234.39 Kbytes Page：1 Pages

固态电容

A770, Polymer Aluminum, 39 uF, 20, 50 VDC, -55/125°C

文件：234.39 Kbytes Page：1 Pages

A770, Polymer Aluminum, 330 uF, 20, 25 VDC, -55/125°C

文件：234.09 Kbytes Page：1 Pages

固态电容

A770, Polymer Aluminum, 330 uF, 20, 25 VDC, -55/125°C

文件：234.09 Kbytes Page：1 Pages

A770, Polymer Aluminum, 56 uF, 20, 63 VDC, -55/125°C

文件：234.2 Kbytes Page：1 Pages

A770, Polymer Aluminum, 56 uF, 20, 63 VDC, -55/125°C

文件：234.2 Kbytes Page：1 Pages

A770, Polymer Aluminum, 1,000 uF, 20, 16 VDC, -55/125°C

文件：234.04 Kbytes Page：1 Pages

A770, Polymer Aluminum, 1,000 uF, 20, 16 VDC, -55/125°C

文件：234.04 Kbytes Page：1 Pages

A770, Polymer Aluminum, 330 uF, 20, 35 VDC, -55/125°C

文件：233.92 Kbytes Page：1 Pages

A770, Polymer Aluminum, 330 uF, 20, 35 VDC, -55/125°C

文件：233.92 Kbytes Page：1 Pages

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3870 A Surge current 50 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4230 A Surge current 50 kA

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th