QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

Description The VN770K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower™ M0-3 Technology. Features ■ Suited as low volt

for car body applications

Description The L5958 includes 6 linear voltage regulators and a 2 A power switch, working down to 4.5 V battery level. All the voltage regulators can be switched off through the three enable pins. Features ■ L5958 six outputs: – 8.5 V @ 200 mA – 5.0 V @ 300 mA – 3.3 V @ 250 mA

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

DESCRIPTION The VN770P is a device formed by three monolithic chips housed in a standard SO28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower technology. This device is suitable to drive a DC motor in

封装/外壳：28-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC MOTOR DRIVER PAR 28SO 集成电路（IC） 全半桥驱动器

封装/外壳：28-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC MOTOR DRIVER PAR 28SO 集成电路（IC） 全半桥驱动器

Quad smart power solid state relay for complete H-bridge configurations

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3870 A Surge current 50 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4230 A Surge current 50 kA

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature