2.4GHz 无线通信芯片

A7701 is a TX technology. It integrates PA (up to 23dBm output power), LNA (gain up to 16 dB), RF switch as well as matching network so that only a few external components are needed. A7701 consists of 3 stages PA to provide extended link budget (distance) of larger TX output power and LNA for highe Small size (QFN 3X3, 16 pins).\nSupport 2400 ~ 2483.5MHz ISM band.\nWide range operation 3V ~ 3.9V.\nTX output power up to 23dBm.\nFew external components.\nIntegrate 3 stages PA.\nIntegrate LNA.\nIntegrate RF switch.\nIntegrate matching network.\n5dB LNA noise figure.\nRX current 5.4 mA.;

1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DFB DC-PBH LASER DIODE MODULE

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CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS

DESCRIPTION The NX8563LB Series is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for D-WDM transmission systems in which external modulators are used. FEATURES • Output power Pf = 10 mW MIN. • Wavelength availability λp = 1

1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE

DESCRIPTION The NDL7603P Series is a 1310 nm phase-shifted DFB (distributed feedback) laser diode module with single mode fiber. The Multiple Quantum Well (st-MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over a wide temperature range of -40 to +85°C. It

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for transmission systems in which external modulators are used. FEATURES • Output power Pf = 20 mW MIN. • Wavelength selectable for ITU-T standards

1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS

DESCRIPTION The NDL7910P is an EA modulator integrated 1 550 nm DFB-LD for 2.5 Gb/s. The newly developed bandgap energy controlled Selective MOVPE technology is utilized as fabrication method. It is designed for 2.5 Gb/s ultralong reach applications. FEATURES • Integrated electroabsorption modu