NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTOR

文件：124 Kbytes Page：6 Pages

NPN SILICON POWER TRANSISTOR

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 2.5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Single Band LNA and Mixer FEIC

Introduction The MC13770 is a single band front-end IC designed for wireless receiver applications. It contains a low noise LNA and a high linearity mixer. The LNA is integrated with a bypass switch to preserve input intercept performance. The device is fabricated using Freescales Advanced RF BiC

Single In-Line Conformal

文件：91.16 Kbytes Page：3 Pages

Miniature connector

文件：309.09 Kbytes Page：2 Pages

Color Monitor

文件：1.37882 Mbytes Page：43 Pages

Waveguide to Coaxial Adapter

文件：179.17 Kbytes Page：5 Pages