9A , 650V    N-CHANNEL POWER MOSFET

The UTC 9N65 is an N-channel mode power MOSFET using UTC’sadvanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation • RDS(ON)=1.1 Ω @ VGSS=10V \n• Improved dv/dt Capability \n• 100% Avalanche Tested;

N-Channel 650V (D-S) Power MOSFET

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9A, 650V N-CHANNEL POWER MOSFET

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Fast Switching Speed

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丝印代码：9N65AF；9A 650V N-channel enhancement mode field effect transistor

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丝印代码：9N65AS；9A 650V N-channel enhancement mode field effect transistor

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丝印代码：9N65AS；9A 650V N-channel enhancement mode field effect transistor

文件：961.5 Kbytes Page：6 Pages

丝印代码：9N65AD；9A 650V N-channel enhancement mode field effect transistor

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丝印代码：9N65AF；9A 650V N-channel enhancement mode field effect transistor

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丝印代码：9N65AC；9A 650V N-channel enhancement mode field effect transistor

文件：961.5 Kbytes Page：6 Pages

9A, 650V N-CHANNEL POWER MOSFET

The UTC 9N65K-MT is an N-channel mode power MOSFET usingUTC’s advanced technology to provide customers with planar stripe andDMOS technology. This technology allows a minimum on-stateresistance and superior switching performance. It also can withstandhigh energy pulse in the avalanche and commutatio • RDS(ON) < 1.1Ω @ VGS=10V\n• High Switching Speed\n• Improved dv/dt Capability\n• 100% Avalanche Tested;

9A 650V N-channel enhancement mode field effect transistor

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N-Channel 650V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

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9A, 650V N-CHANNEL POWER MOSFET

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9A, 650V N-CHANNEL POWER MOSFET

文件：177.83 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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9A, 650V N-CHANNEL POWER MOSFET

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N-Channel 650V (D-S) Power MOSFET

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9A, 650V N-CHANNEL POWER MOSFET

文件：177.83 Kbytes Page：5 Pages

Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ●

Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ●

SMPS MOSFET

HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ●

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

Power MOSFET

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