9A 650V N-channel enhancement mode field effect transistor

文件：961.5 Kbytes Page：6 Pages

丝印代码：9N65AF；9A 650V N-channel enhancement mode field effect transistor

文件：961.5 Kbytes Page：6 Pages

丝印代码：9N65AS；9A 650V N-channel enhancement mode field effect transistor

文件：961.5 Kbytes Page：6 Pages

丝印代码：9N65AS；9A 650V N-channel enhancement mode field effect transistor

文件：961.5 Kbytes Page：6 Pages

丝印代码：9N65AD；9A 650V N-channel enhancement mode field effect transistor

文件：961.5 Kbytes Page：6 Pages

丝印代码：9N65AF；9A 650V N-channel enhancement mode field effect transistor

文件：961.5 Kbytes Page：6 Pages

丝印代码：9N65AC；9A 650V N-channel enhancement mode field effect transistor

文件：961.5 Kbytes Page：6 Pages

Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ●

Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ●

SMPS MOSFET

HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ●

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

Power MOSFET

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