N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward

Integrated Circuit 1.22V Reference Diode

Description: The NTE998 is a temperature compensated low voltage reference device in a TO92 type package. A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this construction is low noise, low current, and good long term stability associated wi

Silicon N-channel dual-gate MOS-FETs

文件：114.27 Kbytes Page：12 Pages

Silicon N-channel dual-gate MOS-FETs

文件：114.27 Kbytes Page：12 Pages

3.0 mm Blue Series

文件：29.9 Kbytes Page：1 Pages