Complementary

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • TrenchFET® Power MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET 2.5-V Rated

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –5 A, –20 V, RDS(ON) = 50 mΩ @ VG

2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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