RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

包装：散装 描述：9933 STRUCTURED TOOTH TUNGSTEN C 工具 配件

RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

Dual P-Channel PowerTrench® MOSFET

General Description\nThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). · –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.5 V\nRDS(ON) = 105 mW @ VGS = –3.0 V\nRDS(ON) = 115 mW @ VGS = –2.7 V\n· Extended VGSS range (±12V) for battery applications\n· Low gate charge\n· High performance trench technology for extremely\nlow RDS(ON)\n· High power and current handling capabilityAppl;

包装：线轴 描述：CBL 8COND 24AWG SHLD 电缆，电线 多芯导线

线缆线束

Cumulative Trauma Disorders can result from the prolonged use of manually powered hand tools.

文件：323.82 Kbytes Page：6 Pages

miniSMD Selection Guide and Product Data

文件：396.67 Kbytes Page：12 Pages

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

Dual P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features · –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.

Dual P-Channel Enhancement-Mode MOSFET

Dual P-Channel Enhancement-Mode MOSFET

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：191.61 Kbytes Page：8 Pages

Dual P-Channel 20-V (D-S) MOSFET

文件：48.7 Kbytes Page：4 Pages