Dual P-Channel PowerTrench® MOSFET

General Description\nThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). · –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.5 V\nRDS(ON) = 105 mW @ VGS = –3.0 V\nRDS(ON) = 115 mW @ VGS = –2.7 V\n· Extended VGSS range (±12V) for battery applications\n· Low gate charge\n· High performance trench technology for extremely\nlow RDS(ON)\n· High power and current handling capabilityAppl;

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

Dual P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features · –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.

Dual P-Channel Enhancement-Mode MOSFET

Dual P-Channel Enhancement-Mode MOSFET

Dual N-Channel 2.5V Specified PowerTrench MOSFET

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Dual P-Channel 20-V (D-S) MOSFET

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