P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

20V P-Channel Increased MOS FET

文件：299.94 Kbytes Page：2 Pages

P-Channel 30-V (D-S) MOSFET

文件：972.94 Kbytes Page：8 Pages

KEYS FOR USE WITH FUNCTIONAL SAFETY ENCODER

文件：168.2 Kbytes Page：2 Pages

包装：散装 描述：MACH SCREW BINDING SLOTTED #6-32 五金件，紧固件，配件 螺丝，螺栓

场效应管(MOSFET)

场效应管

Trench Mosfet

N258 5G Band 24 GHz Filter

Features/Benefits  SMT waveguide  No mismatch during installation  Compatible with SMA or K field replaceable connectors  High Q  Made in U.S.A.

N258 5G Band 24 GHz Filter

Features/Benefits  SMT waveguide  No mismatch during installation  Compatible with SMA or K field replaceable connectors  High Q  Made in U.S.A.

N258 5G Band 24 GHz Filter

Features/Benefits  SMT waveguide  No mismatch during installation  Compatible with SMA or K field replaceable connectors  High Q  Made in U.S.A.

N258 5G Band 24 GHz Filter

Features/Benefits  SMT waveguide  No mismatch during installation  Compatible with SMA or K field replaceable connectors  High Q  Made in U.S.A.

5G Bandreject Filter

Features/Benefits  Ceramic Filter  SMA-F Connectors  Made in U.S.A.

P-channel Enhancement Mode Power MOSFET

Features VDS= -30V, ID= -5.1A RDS(ON)

包装：盒 描述：METAL SHAFT KEY 4MM SQUARE BY 12 传感器，变送器 配件

P-Channel Enhancement Mode MOSFET

文件：118.48 Kbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.69372 Mbytes Page：8 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：180.03 Kbytes Page：6 Pages

P-Channel 30-V (D-S) MOSFET

文件：959.68 Kbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：959.64 Kbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：959.56 Kbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：959.57 Kbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：959.52 Kbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：959.48 Kbytes Page：8 Pages

KEYS FOR USE WITH FUNCTIONAL SAFETY ENCODER

文件：168.2 Kbytes Page：2 Pages

KEYS FOR USE WITH FUNCTIONAL SAFETY ENCODER

文件：168.2 Kbytes Page：2 Pages

KEYS FOR USE WITH FUNCTIONAL SAFETY ENCODER

文件：168.2 Kbytes Page：2 Pages

P-Channel 30-V (D-S) MOSFET

文件：960.32 Kbytes Page：8 Pages