位置:首页 > IC中文资料 > 9435

9435价格

参考价格:¥0.2692

型号:9435 品牌:Keystone 备注:这里有9435多少钱,2026年最近7天走势,今日出价,今日竞价,9435批发/采购报价,9435行情走势销售排行榜,9435报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:9435;PWM applications

DESCRIPTION The G9435S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Application ●PWM applications ●Load switch ●Power management

GOFORD

谷峰半导体

丝印代码:9435;P-Channel MOSFET

文件:431.98 Kbytes Page:3 Pages

KEXIN

科信电子

丝印代码:9435;P-Channel MOSFET

文件:1.86392 Mbytes Page:4 Pages

KEXIN

科信电子

丝印代码:9435;Single P-Channel, -30V, -6.3A, Power MOSFET

文件:956.96 Kbytes Page:7 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印代码:9435;Single P-Channel, -30V, -6.3A, Power MOSFET

文件:956.96 Kbytes Page:7 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

9435

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

HOTTECH

合科泰

9435

丝印代码:9435TFCYWP;SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

TUOFENG

拓锋半导体

9435

场效应管(MOSFET)

TDSEMIC

9435

场效应管

HXYMOS

华轩阳电子

9435

Trench Mosfet

GOFORD

谷峰半导体

9435

KEYS FOR USE WITH FUNCTIONAL SAFETY ENCODER

文件:168.2 Kbytes Page:2 Pages

SENSATA

森萨塔

9435

20V P-Channel Increased MOS FET

文件:299.94 Kbytes Page:2 Pages

FUMAN

富满微

9435

包装:散装 描述:MACH SCREW BINDING SLOTTED #6-32 五金件,紧固件,配件 螺丝,螺栓

KEYSTONE

Keystone Electronics Corp.

9435

P-Channel 30-V (D-S) MOSFET

文件:972.94 Kbytes Page:8 Pages

VBSEMI

微碧半导体

9435

MACHINE SCREW PAN PHILLIPS 10-32

文件:130.87 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

N258 5G Band 24 GHz Filter

Features/Benefits  SMT waveguide  No mismatch during installation  Compatible with SMA or K field replaceable connectors  High Q  Made in U.S.A.

JOHANSONMANUFACTURING

楼氏集团

N258 5G Band 24 GHz Filter

Features/Benefits  SMT waveguide  No mismatch during installation  Compatible with SMA or K field replaceable connectors  High Q  Made in U.S.A.

JOHANSONMANUFACTURING

楼氏集团

N258 5G Band 24 GHz Filter

Features/Benefits  SMT waveguide  No mismatch during installation  Compatible with SMA or K field replaceable connectors  High Q  Made in U.S.A.

JOHANSONMANUFACTURING

楼氏集团

N258 5G Band 24 GHz Filter

Features/Benefits  SMT waveguide  No mismatch during installation  Compatible with SMA or K field replaceable connectors  High Q  Made in U.S.A.

JOHANSONMANUFACTURING

楼氏集团

5G Bandreject Filter

Features/Benefits  Ceramic Filter  SMA-F Connectors  Made in U.S.A.

JOHANSONMANUFACTURING

楼氏集团

P-channel Enhancement Mode Power MOSFET

Features VDS= -30V, ID= -5.1A RDS(ON)

BYCHIP

百域芯

包装:盒 描述:METAL SHAFT KEY 4MM SQUARE BY 12 传感器,变送器 配件

ETC

知名厂家

P-Channel Enhancement Mode MOSFET

文件:118.48 Kbytes Page:8 Pages

BOOKLY

百力微电子

P-Channel 30-V (D-S) MOSFET

文件:1.69372 Mbytes Page:8 Pages

VBSEMI

微碧半导体

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:180.03 Kbytes Page:6 Pages

A-POWER

富鼎先进电子

P-Channel 30-V (D-S) MOSFET

文件:959.68 Kbytes Page:8 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

文件:959.64 Kbytes Page:8 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

文件:959.56 Kbytes Page:8 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

文件:959.57 Kbytes Page:8 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

文件:959.52 Kbytes Page:8 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

文件:959.48 Kbytes Page:8 Pages

VBSEMI

微碧半导体

KEYS FOR USE WITH FUNCTIONAL SAFETY ENCODER

文件:168.2 Kbytes Page:2 Pages

SENSATA

森萨塔

KEYS FOR USE WITH FUNCTIONAL SAFETY ENCODER

文件:168.2 Kbytes Page:2 Pages

SENSATA

森萨塔

KEYS FOR USE WITH FUNCTIONAL SAFETY ENCODER

文件:168.2 Kbytes Page:2 Pages

SENSATA

森萨塔

P-Channel 30-V (D-S) MOSFET

文件:960.32 Kbytes Page:8 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode MOSFET

CET

华瑞

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features · –5.3 A, –30 V RDS(ON) = 50

FAIRCHILD

仙童半导体

Bipolar Power Transistors

Bipolar Power Transistors PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Sat

MOTOROLA

摩托罗拉

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS

FAIRCHILD

仙童半导体

P-Channel Logic Level PowerTrench MOSFET

文件:101.08 Kbytes Page:5 Pages

FAIRCHILD

仙童半导体

9435产品属性

  • 类型

    描述

  • Configuration:

    P channel

  • ESD:

    NO

  • VDS(max):

    -30V

  • Id at 25℃(max):

    -5.1A

  • PD(max):

    2.5W

  • Vgs(th)typ(V):

    -1.6V

  • RDS(on)(typ)(@10V):

    48mΩ~55mΩ

  • RDS(on)(typ)(@4.5V):

    73mΩ~105mΩ

  • Qg(nC):

    12

  • Ciss:

    1040

  • Crss:

    105

更新时间:2026-5-23 12:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GTM
2016+
SOP8
3000
只做原装,假一罚十,公司可开17%增值税发票!
GTM
23+
SOP-8
22512
##公司主营品牌长期供应100%原装现货可含税提供技术
GTM
2450+
SOP8
8850
只做原装正品假一赔十为客户做到零风险!!
GTM
24+
SOP8
27950
郑重承诺只做原装进口现货
GT
20+
SOP-8
2960
诚信交易大量库存现货
GOFORD/谷峰
25+
SOP-8
90000
全新原装现货
GOFORD
24+
SOP-8
9048
全新 发货1-2天

9435数据表相关新闻