Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ

Features Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package CDM ESD

Dual N-Channel PowerTrench짰 MOSFET 100 V, 2.7 A, 105 m廓

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N-Channel Enhancement MOSFET

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Max rDS(on) = 105 m廓 at VGS = 10 V, ID = 2.7 A

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High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Drivers

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