Features

Shielded Gate MOSFET Technology

Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A

Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A

High performance trench technology for extremely low rDS(on)

High power and current handling capability in a widely used surface mount package

CDM ESD protection level > 2KV typical (Note 4)

100% UIL Tested

RoHS Compliant

General Description

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Application

DC-DC conversion