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型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:800P06LM;OptiMOSTM Power Transistor, -60 V

Features • P-Channel • Very low on-resistance RDS(on) @ VGS=4.5 V • 100 avalanche tested • Logic Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

INFINEON

英飞凌

高压分离器件 可控硅

• 中央放大闸门\n• 国际标准封装TO-200AC(B-PUK)\n• 符合RoHS规范\n;

NELLSEMI

尼尔半导体

Zero-Force Touch Buttons

文件:105.21 Kbytes Page:5 Pages

ALLEN-BRADLEY

Zero-Force Touch Buttons

文件:105.21 Kbytes Page:5 Pages

ALLEN-BRADLEY

Zero-Force Touch Buttons

文件:105.21 Kbytes Page:5 Pages

ALLEN-BRADLEY

Special Function Timer

文件:134.21 Kbytes Page:1 Pages

SELEC

Special Function Timer

文件:134.21 Kbytes Page:1 Pages

SELEC

Special Function Timer

文件:134.21 Kbytes Page:1 Pages

SELEC

Special Function Timer

文件:134.21 Kbytes Page:1 Pages

SELEC

Special Function Timer

文件:134.21 Kbytes Page:1 Pages

SELEC

22.5mm Din Rail Timer

文件:201.42 Kbytes Page:1 Pages

SELEC

Voltage rating up to 1600V

文件:883.13 Kbytes Page:3 Pages

NELLSEMI

尼尔半导体

PHASE CONTROL THYRISTORS

文件:883.13 Kbytes Page:3 Pages

NELLSEMI

尼尔半导体

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

MOTOROLA

摩托罗拉

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NEC

瑞萨

NSC800TM High-Performance Low-Power CMOS Microprocessor

文件:785.95 Kbytes Page:76 Pages

NSC

国半

800P产品属性

  • 类型

    描述

  • 型号

    800P

  • 制造商

    ALLEN-BRADLEY

  • 制造商全称

    Allen-Bradley

  • 功能描述

    Zero-Force Touch Buttons

更新时间:2026-5-18 15:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
25+
TDSON-8FL
12000
原装品质,专业护航,省心采购
Infineon
25+
PG-TDSON-8
15500
英飞凌优势渠道全系列在售
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
INFINEON
24+
PG-TDSON-8
39500
进口原装现货 支持实单价优
INFINEON
23+
PG-TDSON-8
8000
只做原装现货
INFINEON
54
Infineon(英飞凌)
2447
PG-TDSON-8
115000
5000个/圆盘一级代理专营品牌!原装正品,优势现货,
INFINEON
TDSON8
50000
INFINEON
24+
con
53
现货常备产品原装可到京北通宇商城查价格
Infineon(英飞凌)
25+
-
500000
源自原厂成本,高价回收工厂呆滞

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