位置:首页 > IC中文资料第11961页 > 800P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:800P06LM;OptiMOSTM Power Transistor, -60 V Features • P-Channel • Very low on-resistance RDS(on) @ VGS=4.5 V • 100 avalanche tested • Logic Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | INFINEON 英飞凌 | |||
Zero-Force Touch Buttons 文件:105.21 Kbytes Page:5 Pages | ALLEN-BRADLEY | |||
Zero-Force Touch Buttons 文件:105.21 Kbytes Page:5 Pages | ALLEN-BRADLEY | |||
Zero-Force Touch Buttons 文件:105.21 Kbytes Page:5 Pages | ALLEN-BRADLEY | |||
Special Function Timer 文件:134.21 Kbytes Page:1 Pages | SELEC | |||
Special Function Timer 文件:134.21 Kbytes Page:1 Pages | SELEC | |||
Special Function Timer 文件:134.21 Kbytes Page:1 Pages | SELEC | |||
Special Function Timer 文件:134.21 Kbytes Page:1 Pages | SELEC | |||
Special Function Timer 文件:134.21 Kbytes Page:1 Pages | SELEC | |||
22.5mm Din Rail Timer 文件:201.42 Kbytes Page:1 Pages | SELEC | |||
Voltage rating up to 1600V 文件:883.13 Kbytes Page:3 Pages | NELLSEMI 尼尔半导体 | |||
高压分离器件 可控硅 | NELLSEMI 尼尔半导体 | |||
PHASE CONTROL THYRISTORS 文件:883.13 Kbytes Page:3 Pages | NELLSEMI 尼尔半导体 | |||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | |||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | |||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, | NEC 瑞萨 | |||
NSC800TM High-Performance Low-Power CMOS Microprocessor 文件:785.95 Kbytes Page:76 Pages | NSC 国半 |
800P产品属性
- 类型
描述
- 型号
800P
- 制造商
ALLEN-BRADLEY
- 制造商全称
Allen-Bradley
- 功能描述
Zero-Force Touch Buttons
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
23+ |
SSOP |
12000 |
全新原装假一赔十 |
|||
INFINEON/英飞凌 |
25+ |
SuperSO85x6 |
20300 |
INFINEON/英飞凌原装特价ISC800P06LMATMA1即刻询购立享优惠#长期有货 |
|||
ICS |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
|||
ICS |
SSOP-56 |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
Infineon |
25+ |
PG-TDSON-8 |
15500 |
英飞凌优势渠道全系列在售 |
|||
ICS |
2223+ |
SSOP-56 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
AMI |
2015+ |
SOP |
19889 |
一级代理原装现货,特价热卖! |
|||
VIOR |
25+23+ |
SOP |
51745 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
VIOR |
25+ |
SOP |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
INTEGRATEDCI |
05+ |
原厂原装 |
4291 |
只做全新原装真实现货供应 |
800P规格书下载地址
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