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71V65703价格

参考价格：￥94.7400

型号：71V65703S85BQ 品牌：IDT 备注：这里有71V65703多少钱，2026年最近7天走势，今日出价，今日竞价，71V65703批发/采购报价，71V65703行情走势销售排行榜，71V65703报价。

型号	功能描述	生产厂家企业	LOGO
71V65703	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703	3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal regist High performance system speed - 100 MHz\n(7.5 ns Clock-to-Data Access)\nZBTTM Feature - No dead cycles between write and read\ncycles\nInternally synchronized output buffer enable eliminates the need to control OE\nSingle R/W (READ/WRITE) control pin\n4-word burst capability (Interleaved or linear)\;	RENESAS 瑞萨	RENESAS
71V65703S75BG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75BG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75BGG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75BGG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75BQ	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75BQ8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75BQG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75BQG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75PFG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75PFG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75PFGI	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75PFGI8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BGG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BGG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BQ	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BQ8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BQG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BQG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BQGI	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BQGI8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BQI	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80BQI8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80PFG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80PFG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80PFGI	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S80PFGI8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BGG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BGG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BGGI	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BGGI8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BGI	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BGI8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BQ	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BQ8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BQG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BQG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BQGI	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BQGI8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BQI	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85BQI8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85PFG	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85PFG8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85PFGI	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S85PFGI8	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/	RENESAS 瑞萨	RENESAS
71V65703S75BG8	封装/外壳：119-BGA 包装：托盘描述：IC SRAM 9MBIT PARALLEL 119PBGA 集成电路（IC）存储器	RENESAS 瑞萨	RENESAS
71V65703S75BGG	封装/外壳：119-BGA 包装：卷带（TR）描述：IC SRAM 9MBIT PARALLEL 119PBGA 集成电路（IC）存储器	RENESAS 瑞萨	RENESAS
IDT71V65703	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 文件：504.78 Kbytes Page：26 Pages	IDT	IDT
IDT71V65703	3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs 文件：615.34 Kbytes Page：23 Pages	IDT	IDT

71V65703供应商更多...

更新时间：2026-5-24 22:14:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市芯亿发电子科技有限公司	71V65703	IDT	26+	BGA	20000	公司只有正品,实单来谈	询价
深圳市科芯源微电子有限公司	71V65703	IDT	2026+	BGA	996880	只做原装欢迎来电资询	询价
深圳市冠亿通科技有限公司	71V65703S85BQG	IDT, Integrated Device Technol	24+25+		16500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
深圳市一线半导体有限公司	71V65703S75PF	IDT	24+	QFP	67		询价
深圳市中联芯电子有限公司	71V65703S85BQI	IDT	25+	NA	9000	只做原装正品有挂有货假一赔十	询价
深圳市勤思达科技有限公司	71V65703S80BQG	IDT	24+	N	5000	全新原装正品,现货销售	询价
深圳诚思涵科技有限公司	71V65703S75BQ	IDT	16+	QFP	4000	进口原装现货/价格优势!	询价
艾睿（深圳）半导体有限公司	71V65703S75BG	RENESAS(瑞萨)/IDT	2447	PBGA-119(14x22)	315000	84个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市创新迹电子有限公司	71V65703S80BQG	IDT	25+	N	8000	只有原装	询价
深圳市昂芯微科技有限公司	71V65703	IDT	23+	BGA	5107	所有报价以当天为准	询价

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16-02-0069 87439-0300 644752-5 9-1393222-1 281839-3 16-02-0115 0527451497 1379118-1 50-36-1678 189727-1 1-1102296-1 51191-0600 640250-4 171814-1009 15-24-6180 6-103672-9 345259-1 35507-0500 15-24-9144 15-24-9164 1-350944-0 794824-1 46114-1016 770586-1 502
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定位: Top View If - 順向電流: 20 mA 封裝: Reel 品牌: Everlight 安裝風格: SMD/SMT 濕度敏感: Yes 產品類型: LED - Standard 原廠包裝數量: 3000 子類別: LEDs
2019-11-4

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71V65703芯片相关品牌

71V65703规格书下载地址

71V65703参数引脚图相关

71V65703数据表相关新闻

716W-X2/0保证原装正品，现货价美

721-833/001-000

7211MD9AV2BE

7165-0796新到货只做原装，诚信为本！

719502C-2PT

7-215/R6C-AQ1R2B/3T原装现货

DdatasheetPDF页码索引