您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料 > 71V65703S80BQ

型号 功能描述 生产厂家 企业 LOGO 操作
71V65703S80BQ

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65703S80BQ

封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 165CABGA 集成电路（IC） 存储器

ETC

知名厂家

71V65703S80BQ8

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65703S80BQG

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65703S80BQG8

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65703S80BQGI

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65703S80BQGI8

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65703S80BQI

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65703S80BQI8

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65703S80BQG

封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 165CABGA 集成电路（IC） 存储器

ETC

知名厂家

71V65703S80BG

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65703S80BGG

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65703S80BQ供应商更多...

更新时间：2025-11-22 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
艾睿（深圳）半导体有限公司
71V65703S80BQ
RENESAS(瑞萨)/IDT
2447
CABGA-165(13x15)
315000
136个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
深圳市冠亿通科技有限公司
71V65703S80BQGI
Renesas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
深圳市诺美思科技有限公司
71V65703S80BQG
IDT
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市天芯威科技有限公司
71V65703S80BQG
IDT
24+
N
8000
新到现货，只做全新原装正品
询价
深圳市斌腾达科技有限公司
71V65703S80BQ
IDT, Integrated Device Technol
21+
64-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
深圳市勤思达科技有限公司
71V65703S80BQG
IDT
24+
N
5000
全新原装正品,现货销售
询价
现代芯城（深圳）科技有限公司
71V65703S80BQ
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市芯为科技有限公司
71V65703S80BQ
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
瀚佳科技(深圳)有限公司
71V65703S80BQ
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一级代理/放心采购
询价
讯运(深圳/上海)电子有限公司
71V65703S80BQGI
RENESAS(瑞萨)/IDT
2021+
CABGA-165(13x15)
499
询价

71V65703S80BQ芯片相关品牌

71V65703S80BQ规格书下载地址

71V65703S80BQ参数引脚图相关

71V65703S80BQ数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示