71V547价格

参考价格:¥35.3395

型号:71V547S100PFG 品牌:IDT 备注:这里有71V547多少钱,2025年最近7天走势,今日出价,今日竞价,71V547批发/采购报价,71V547行情走势销售排行榜,71V547报价。
型号 功能描述 生产厂家 企业 LOGO 操作
71V547

3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

RENESAS

瑞萨

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

封装/外壳:100-LQFP 包装:管件 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:100-LQFP 包装:管件 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs

文件:162.39 Kbytes Page:19 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

Synchronous SRAM

文件:711.63 Kbytes Page:20 Pages

IDT

更新时间:2025-12-26 11:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
2021+
TQFP-100(14x14)
499
RENESAS(瑞萨)/IDT
24+
TQFP100(14x20)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
IDT
23+
QFP
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
IDT,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
IDT
BGAQFP
899
进口原装假一罚十特价
RENESAS(瑞萨)/IDT
2447
TQFP-100(14x14)
315000
72个/托盘一级代理专营品牌!原装正品,优势现货,长
IDT
24+
257
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
IDT
24+
TQFP
6980
原装现货,可开13%税票

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